pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 625 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = -10 a, i e =0 -60 v bv ceo * collector emitter breakdown voltage i c = -10ma, i b =0 -60 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -50v, i e =0 -10 na h fe dc current gain i c = -0.1ma, v ce = -10v v ce = -10v, i c = -1ma, v ce = -10v , i c = -10ma v ce = -10v, *i c = -150ma v ce = -10v, *i c = -500ma 75 100 100 100 50 300 v ce (sat) * collector-emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -0.4 -1.6 v v v be (sat) base emitter saturation voltage i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma -1.3 -2.6 v v c ob output capacitance v cb = -10v, i e =0 f=1mhz 8pf f t * current gain bandwidth product i c = -50ma, v ce = -20v f=100mhz 200 mhz t on turn on time v cc = -30v, i c = -150ma i b1 = -15ma 45 ns t off turn off time v cc = -6v, i c = -150ma i b1 =i b2 = -15ma 100 ns general purpose transistor collector-emitter voltage: v ceo = 60v collector power dissipation: p c (max)=625mw 1. emitter 2. base 3. collector to-92 1 STC2907A pnp silicon transistor
typical characteristics STC2907A figure 1. dc current gain figure 2. collector-emitter saturation voltage base-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product -1 -10 -100 -1000 10 100 1000 v ce = -10v h fe , dc current gain i c [a], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -1 -10 -100 0.1 1 10 100 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 10 100 1000 v ce = -20v f t [mhz], current gain bandwidth product i c [ma], collector current
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